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Power MOSFET Product List

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『CSD22206W』

『CSD22206W』

8V, 4.7mΩ, P-channel NexFET power MOSFET 'CSD22206W'

This -8V, 4.7mΩ, 1.5mm×1.5mm device is designed to achieve the lowest possible on-resistance and gate charge in the smallest possible footprint, while also providing excellent thermal characteristics in a very low profile. With its low on-resistance, small footprint, and low profile, this device is ideal for battery-powered applications with volume constraints. 【Features】 ■ Extremely low resistance ■ Small footprint of 1.5mm×1.5mm ■ Lead-free ■ Gate ESD protection ■ RoHS compliant *For more details, please contact us.

  • Other semiconductors
  • Other power sources
  • Transistor
  • Power MOSFET

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Power Semiconductor 2000V N-Channel Power MOSFET

Power Semiconductor 2000V N-Channel Power MOSFET

High voltage power conversion system! Suitable for various power exchange systems.

The 2000V N-channel power MOSFET is a high-voltage power MOSFET for high-voltage power conversion systems. It eliminates the need for series connections of low-voltage devices, allowing for parallel operation due to its positive temperature coefficient of on-resistance, enabling the construction of cost-effective power systems. Other advantages include a reduction in the number of components that make up the gate drive circuit due to fewer devices used, leading to cost reduction, improved reliability through simpler designs, and saving PCB space, contributing to miniaturization. 【Features】 ○ High blocking voltage ○ Unique high-voltage package ○ Increased creepage distance between terminals ○ Positive temperature coefficient of on-resistance ○ Space-saving (reducing multiple series connections of devices) For more details, please contact us or download the catalog.

  • Other semiconductors
  • Other electronic parts
  • Power MOSFET

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[Structure and Process Analysis Report] DENSO SiC-MOSFET

[Structure and Process Analysis Report] DENSO SiC-MOSFET

The mounted chip uses a trench gate! It is a 1200V class with built-in current and temperature sensors.

This document is a structural and process analysis report on DENSO's SiC-MOSFET. The 2021 Toyota MIRAI hydrogen fuel cell (FC) boost converter incorporates DENSO's in-house manufactured SiC-MOSFET. The SiC-MOSFET chip features low ON resistance (measured with LTEC) at a drive current of 200A class, and the chip size is among the largest for automotive applications. [Overview of Contents (Excerpt)] ■ Product and Analysis Overview ■ Report Contents *For more details, please refer to the PDF document or feel free to contact us.

  • Printed Circuit Board
  • inverter
  • Transistor
  • Power MOSFET

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